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savantic semiconductor product specification silicon pnp power transistors 2SA1135 d escription with to-3pn package complement to type 2sc2665 applications for general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -6 v i c collector current -4 a i b base current -1 a p c collector power dissipation t c =25 55 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1135 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -80 v v cesat collector-emitter saturation voltage i c =-2a; i b =-0.2a -1.0 v i cbo collector cut-off current v cb =-80v; i e =0 -1.0 ma i ebo emitter cut-off current v eb =-6v; i c =0 -1.0 ma h fe dc current gain i c =-1a ; v ce =-4v 40 f t transition frequency i e =0.2a ; v ce =-10v 10 mhz switching times t r rise time 1.0 s t stg storage time 0.4 s t f fall time i c =-2a ; v cc =-6v i b1 =-i b2 =-0.3a;r l =3 @ 0.15 s
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1135 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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